Samsung M393B1G70QH0-YK0 8GB vs SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 52

左右 -79% 更低的延时
更快的读取速度，GB/s

17.7 9.8

测试中的平均数值
更快的写入速度，GB/s

16.0 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 29
读取速度，GB/s

9.8 17.7
写入速度，GB/s

8.0 16.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2179 3961

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2400C15D4/4G 4GB

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Crucial Technology CT16G4DFRA266.C16FP 16GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Micron Technology 16ATF4G64HZ-3G2E1 32GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB