Samsung M393B1K70CH0-CH9 8GB vs A-DATA Technology AM1P26KCST2-BABS 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

A-DATA Technology AM1P26KCST2-BABS 16GB

A-DATA Technology AM1P26KCST2-BABS 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

A-DATA Technology AM1P26KCST2-BABS 16GB

需要考虑的原因
A-DATA Technology AM1P26KCST2-BABS 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 44

左右 -7% 更低的延时
更快的读取速度，GB/s

15.5 11.2

测试中的平均数值
更快的写入速度，GB/s

14.1 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

A-DATA Technology AM1P26KCST2-BABS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 41
读取速度，GB/s

11.2 15.5
写入速度，GB/s

8.1 14.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 3006

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation D4N2666PS-16G 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Crucial Technology CT16G4SFRA266.M16FRS 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Micron Technology 8ATF51264AZ-2G1A1 4GB

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Samsung M395T2863QZ4-CF76 1GB

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SK Hynix HMA851S6CJR6N-VK 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

SK Hynix HMA81GS6DJR8N-XN 8GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB