Samsung M393B1K70CH0-CH9 8GB vs A-DATA Technology DDR4 3300 2OZ 4GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

A-DATA Technology DDR4 3300 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3300 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 44

左右 -159% 更低的延时
更快的读取速度，GB/s

22 11.2

测试中的平均数值
更快的写入速度，GB/s

17.0 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

A-DATA Technology DDR4 3300 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 17
读取速度，GB/s

11.2 22.0
写入速度，GB/s

8.1 17.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 3731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A5143TB2-CTD 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Corsair CMD32GX4M2B3466C16 16GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMT32GX4M4C3000C15 8GB

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Crucial Technology BL16G36C16U4WL.M16FE 16GB

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Kingston 9905743-043.A00G 16GB

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Kingston 99U5474-022.A00LF 2GB

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Micron Technology 18ADF2G72PZ-2G3B1 16GB

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Kingston KVR16N11/8-SP 8GB

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Corsair CMR32GX4M2D3000C16 16GB

Corsair CMR32GX4M2D3000C16 16GB

A-DATA Technology AD5U480016G-B 16GB

A-DATA Technology AD5U480016G-B 16GB

A-DATA Technology AD5U480016G-B 16GB

A-DATA Technology AD5U480016G-B 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3200C22-16GRS 16GB

G Skill Intl F4-3200C22-16GRS 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB