Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology BLS16G4D240FSE.16FBD 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Crucial Technology BLS16G4D240FSE.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 44

左右 -26% 更低的延时
更快的读取速度，GB/s

15.4 11.2

测试中的平均数值
更快的写入速度，GB/s

9.9 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 35
读取速度，GB/s

11.2 15.4
写入速度，GB/s

8.1 9.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 2765

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Transcend Information JM3200HLB-16GK 8GB

Transcend Information JM3200HLB-16GK 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston X2YH1K-MIE 16GB

Kingston X2YH1K-MIE 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD16GX4M2C3333C16 8GB

Corsair CMD16GX4M2C3333C16 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB