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SK Hynix DDR2 800 2G 2GB
V-GEN D4H8GL26A8TS6 8GB

SK Hynix DDR2 800 2G 2GB vs V-GEN D4H8GL26A8TS6 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.6
    测试中的平均数值
V-GEN D4H8GL26A8TS6 8GB 需要考虑的原因
V-GEN D4H8GL26A8TS6 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    61 left arrow 77
    左右 -26% 更低的延时
  • 更快的写入速度，GB/s
    8.5 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
V-GEN D4H8GL26A8TS6 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 61
  • 读取速度，GB/s
    2,936.9 left arrow 17.6
  • 写入速度，GB/s
    1,884.0 left arrow 8.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2113

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

V-GEN D4H8GL26A8TS6 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston 9965669-017.A00G 16GB
Kingston 9965669-017.A00G 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
内存RAM
Samsung M391B1G73QH0-CMA 8GB
Samsung M391B1G73QH0-CMA 8GB
JUHOR JHD2666U1916JG 16GB
JUHOR JHD2666U1916JG 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
内存RAM