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Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
比较
Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology CT4G4DFS824A.C8FBR2 4GB
总分
Samsung M393B1K70CH0-CH9 8GB
总分
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
44
左右 -91% 更低的延时
更快的读取速度,GB/s
16.1
11.2
测试中的平均数值
更快的写入速度,GB/s
10.1
8.1
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
23
读取速度,GB/s
11.2
16.1
写入速度,GB/s
8.1
10.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2293
2489
Samsung M393B1K70CH0-CH9 8GB RAM的比较
EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT25664BA160B.C16F 2GB
Panram International Corporation W4U2400PS-8G 8GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C14-8GTRG 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9905701-021.A00G 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M378A5143EB1-CPB 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMU32GX4M4C3466C16 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL18-20-20 D4-3600 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD8266.M16FE 16GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3466C16-8GTZ 8GB
报告一个错误
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Bug description
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