Samsung M393B1K70CH0-CH9 8GB vs Essencore Limited KD48GU880-26N160T 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Essencore Limited KD48GU880-26N160T 8GB

Essencore Limited KD48GU880-26N160T 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Essencore Limited KD48GU880-26N160T 8GB

需要考虑的原因
Essencore Limited KD48GU880-26N160T 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 44

左右 -110% 更低的延时
更快的读取速度，GB/s

17.8 11.2

测试中的平均数值
更快的写入速度，GB/s

11.9 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Essencore Limited KD48GU880-26N160T 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 21
读取速度，GB/s

11.2 17.8
写入速度，GB/s

8.1 11.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 3038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD16GX4M2C3333C16 8GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Corsair CMK16GX4M2K4266C16 8GB

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Corsair CMU64GX4M4C3000C15 16GB

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Mushkin 99[2/7/4]205F 8GB

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Kingston 9905403-156.A00LF 2GB

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JUHOR JHD2666U1916JG 16GB

JUHOR JHD2666U1916JG 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

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Kingston KHX1600C9D3/8G 8GB

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Wilk Elektronik S.A. GR3200S464L22/16G 16GB