Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-3600C19-16GVRB 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-3600C19-16GVRB 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GVRB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 44

左右 -57% 更低的延时
更快的读取速度，GB/s

18.9 11.2

测试中的平均数值
更快的写入速度，GB/s

16.2 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3600C19-16GVRB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 28
读取速度，GB/s

11.2 18.9
写入速度，GB/s

8.1 16.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 3835

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD16GX3M2A2400C10 8GB

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Corsair CMK16GX4M4A2133C15 4GB

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Mushkin MR[A/B]280HHHH16G 16GB

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Crucial Technology CT51264AC800.C16FC 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 99U5584-005.A00LF 4GB

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Corsair CMV16GX4M1A2133C15 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Essencore Limited KD44GU481-26N1600 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston ACR24D4S7D8MB-16 16GB

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Samsung M471B5273DH0-CK0 4GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

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A-DATA Technology DDR4 2133 2OZ 8GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Corsair CMSX8GX4M2A2400C16 4GB

Corsair CMSX8GX4M2A2400C16 4GB