Samsung M393B1K70CH0-CH9 8GB vs Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 44

左右 -57% 更低的延时
更快的读取速度，GB/s

17.5 11.2

测试中的平均数值
更快的写入速度，GB/s

15.3 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 28
读取速度，GB/s

11.2 17.5
写入速度，GB/s

8.1 15.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2293 3673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3400C16-8GSXW 8GB

G Skill Intl F4-3400C16-8GSXW 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Corsair CMK32GX4M2A2133C13 16GB

Corsair CMK32GX4M2A2133C13 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB