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Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
比较
Samsung M393B1K70CH0-CH9 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
总分
Samsung M393B1K70CH0-CH9 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
44
左右 -91% 更低的延时
更快的读取速度,GB/s
17.5
11.2
测试中的平均数值
更快的写入速度,GB/s
14.6
8.1
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
23
读取速度,GB/s
11.2
17.5
写入速度,GB/s
8.1
14.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2293
3260
Samsung M393B1K70CH0-CH9 8GB RAM的比较
EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMWX8GD3600C18W4 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMD32GX4M2B3466C16 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2400C15-8GVR 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KY7N41-MID 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
A-DATA Technology DDR4 2800 8GB
Kingston 9905403-061.A00LF 2GB
Avant Technology W642GU42J5213N 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston HP24D4U7S8MD-8 8GB
Kingston 9965525-140.A00LF 8GB
Kingston KHX2400C15S4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-8GRK 8GB
报告一个错误
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Bug description
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