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Samsung M393B1K70CH0-CH9 8GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Samsung M393B1K70CH0-CH9 8GB vs InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB 需要考虑的原因
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 44
    左右 -91% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 23
  • 读取速度，GB/s
    11.2 left arrow 16.6
  • 写入速度，GB/s
    8.1 left arrow 13.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 3169

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
Samsung M471B5173QH0-YK0 4GB
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Essencore Limited IM48GU88N24-FFFHMB 8GB
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内存RAM
Samsung M393B2G70BH0-YK0 16GB
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Kllisre DDR4-8GB 8GB
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内存RAM
Kingston KVR533D2N4 512MB
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内存RAM
Kingston 99U5584-007.A00LF 4GB
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Micron Technology 8ATF1G64HZ-2G3H1 8GB
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内存RAM
Samsung M386B4G70DM0-CMA4 32GB
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内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
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内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Kingston KHX3600C17D4/16GX 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
Micron Technology 16HTF25664AY-800J1 2GB
Micron Technology 16HTF25664AY-800J1 2GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
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Corsair CMK64GX4M2Z4000C18 32GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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Kingston 9965662-002.A01G 16GB
内存RAM