Samsung M393B1K70CH0-CH9 8GB vs Kingston KTP9W1-MID 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Kingston KTP9W1-MID 16GB

需要考虑的原因
Kingston KTP9W1-MID 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 44

左右 -38% 更低的延时
更快的读取速度，GB/s

16.5 11.2

测试中的平均数值
更快的写入速度，GB/s

14.4 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Kingston KTP9W1-MID 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 32
读取速度，GB/s

11.2 16.5
写入速度，GB/s

8.1 14.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 3424

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Terabyte Co Ltd RCX2-16G3600A 8GB

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Kingston ACR16D3LS1KNG/4G 4GB

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Kingston ACR16D3LS1KNG/4G 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4500C19-8GTZSWE 8GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

G Skill Intl F4-3000C15-8GVKB 8GB

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Samsung M471B5273CH0-CH9 4GB

Kingston 99U5702-025.A00G 8GB

Kingston 99U5702-025.A00G 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston 99U5702-101.A00G 8GB

Kingston 99U5702-101.A00G 8GB