Samsung M393B1K70CH0-YH9 8GB vs Corsair CMD32GX4M2C3466C16W 16GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Corsair CMD32GX4M2C3466C16W 16GB

Corsair CMD32GX4M2C3466C16W 16GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

Corsair CMD32GX4M2C3466C16W 16GB

需要考虑的原因
Corsair CMD32GX4M2C3466C16W 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 49

左右 -104% 更低的延时
更快的读取速度，GB/s

19.2 10.1

测试中的平均数值
更快的写入速度，GB/s

16.6 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Corsair CMD32GX4M2C3466C16W 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 24
读取速度，GB/s

10.1 19.2
写入速度，GB/s

7.8 16.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 4032

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CMT32GX4M4C3466C16 8GB

Corsair CMT32GX4M4C3466C16 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD32G133381 2GB

Patriot Memory (PDP Systems) PSD32G133381 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

EXCELERAM EKBLACK4163016AD 8GB

EXCELERAM EKBLACK4163016AD 8GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Mushkin 99[2/7/4]199F 8GB

Mushkin 99[2/7/4]199F 8GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB