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Samsung M393B1K70CH0-YH9 8GB
Kingston KHX2133C13S4/8G 8GB

Samsung M393B1K70CH0-YH9 8GB vs Kingston KHX2133C13S4/8G 8GB

总分
star star star star star
Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分
star star star star star
Kingston KHX2133C13S4/8G 8GB

Kingston KHX2133C13S4/8G 8GB

差异 规格 评论

差异

Samsung M393B1K70CH0-YH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB
报告一个错误
Kingston KHX2133C13S4/8G 8GB 需要考虑的原因
Kingston KHX2133C13S4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 49
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-YH9 8GB
Kingston KHX2133C13S4/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 35
  • 读取速度，GB/s
    10.1 left arrow 15.4
  • 写入速度，GB/s
    7.8 left arrow 11.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 2672

Samsung M393B1K70CH0-YH9 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB

Kingston KHX2133C13S4/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
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内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston KHX2133C13S4/8G 8GB
Kingston KHX2133C13S4/8G 8GB
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Mushkin 991586 2GB
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内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905315-117.A00LF 1GB
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SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Apacer Technology 78.B1GM3.AF00B 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Corsair CMSO16GX4M1A2133C15 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
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Corsair CM4X16GE2666C18S2 16GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMK16GX4M2K3600C19 8GB
Corsair CMK16GX4M2K3600C19 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
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G Skill Intl F3-14900CL8-4GBXM 4GB
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Essencore Limited IM48GU88N24-FFFHAB 8GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM