Samsung M393B1K70QB0-CK0 8GB vs Chun Well Technology Holding Limited D4U1636181DC 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Chun Well Technology Holding Limited D4U1636181DC 16GB

需要考虑的原因
Chun Well Technology Holding Limited D4U1636181DC 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 47

左右 -31% 更低的延时
更快的读取速度，GB/s

17.3 10.4

测试中的平均数值
更快的写入速度，GB/s

12.2 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 36
读取速度，GB/s

10.4 17.3
写入速度，GB/s

7.8 12.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2169 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMAA4GU6MJR8N-VK 32GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Apacer Technology 78.D2GF2.4010B 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMW64GX4M4A2666C16 16GB

Corsair CMW64GX4M4A2666C16 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMR16GX4M2C3600C18 8GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology CT16G4DFD824A.C16FBR 16GB