Samsung M393B1K70QB0-CK0 8GB vs Crucial Technology CT4G4DFS8213.C8FAR11 4GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR11 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 47

左右 -34% 更低的延时
更快的读取速度，GB/s

13.7 10.4

测试中的平均数值
更快的写入速度，GB/s

10.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 35
读取速度，GB/s

10.4 13.7
写入速度，GB/s

7.8 10.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 2731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR533D2N4 512MB

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Corsair CM3X8GA2400C11Y2R 8GB

Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB

Samsung M393B1G70BH0-CK0 8GB

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Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-2400C16-8GFT 8GB

G Skill Intl F4-2400C16-8GFT 8GB