Samsung M393B1K70QB0-CK0 8GB vs G Skill Intl F4-2400C15-8GRK 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

G Skill Intl F4-2400C15-8GRK 8GB

G Skill Intl F4-2400C15-8GRK 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

G Skill Intl F4-2400C15-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GRK 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 47

左右 -21% 更低的延时
更快的读取速度，GB/s

14.1 10.4

测试中的平均数值
更快的写入速度，GB/s

11.0 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-2400C15-8GRK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 39
读取速度，GB/s

10.4 14.1
写入速度，GB/s

7.8 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 2940

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFD8213.16FA11 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

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Kingston 99U5469-045.A00LF 4GB

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G Skill Intl F4-4133C19-8GTZRF 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Micron Technology AFLD48VH1P 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Apacer Technology 78.CAGSZ.4070B 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMW64GX4M2D3000C16 32GB

Corsair CMW64GX4M2D3000C16 32GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

V-Color Technology Inc. TA48G30S815GK 8GB

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G Skill Intl F4-3733C17-4GVK 4GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston 9905702-121.A00G 8GB

Kingston 9905702-121.A00G 8GB