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Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3000C16-8GTRS 8GB

Samsung M393B1K70QB0-CK0 8GB vs G Skill Intl F4-3000C16-8GTRS 8GB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
G Skill Intl F4-3000C16-8GTRS 8GB 需要考虑的原因
G Skill Intl F4-3000C16-8GTRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 29
  • 读取速度，GB/s
    10.4 left arrow 17.2
  • 写入速度，GB/s
    7.8 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2169 left arrow 3401

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

G Skill Intl F4-3000C16-8GTRS 8GB RAM的比较

Crucial Technology BLS8G4D240FSC.16FBD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston ACR24D4S7S8MB-8 8GB
Kingston ACR24D4S7S8MB-8 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston KHX2666C16/8G 8GB
Kingston KHX2666C16/8G 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK16GX4M2L3000C15 8GB
Corsair CMK16GX4M2L3000C15 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMK16GX4M2B3200C16 8GB
Corsair CMK16GX4M2B3200C16 8GB
内存RAM
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C18-8GVK 8GB
G Skill Intl F4-4000C18-8GVK 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965684-013.A00G 8GB
Kingston 9965684-013.A00G 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CMD16GX4M2K4133C19 8GB
Corsair CMD16GX4M2K4133C19 8GB
内存RAM