Samsung M393B1K70QB0-CK0 8GB vs G Skill Intl F4-3466C16-8GTZSK 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

G Skill Intl F4-3466C16-8GTZSK 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZSK 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 47

左右 -147% 更低的延时
更快的读取速度，GB/s

20 10.4

测试中的平均数值
更快的写入速度，GB/s

15.0 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 19
读取速度，GB/s

10.4 20.0
写入速度，GB/s

7.8 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 3383

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 76.C102G.D170B 8GB

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Kingston KP223C-ELD 2GB

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Heoriady HX2666DT8G-TD 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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G Skill Intl F4-2800C14-16GTZ 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Samsung M4 70T2953EZ3-CE6 1GB

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Kingston 9965662-008.A01G 16GB

Kingston 9965662-008.A01G 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB