Samsung M393B1K70QB0-CK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 47

左右 -27% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 37
读取速度，GB/s

10.4 10.4
写入速度，GB/s

7.8 7.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M386B4G70DM0-CMA4 32GB

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Kingston KHX2933C17D4/8G 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

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Corsair CMR32GX4M2D3000C16 16GB