Samsung M393B1K70QB0-CK0 8GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 52

左右 10% 更低的延时
更快的读取速度，GB/s

10.4 10

测试中的平均数值
更快的写入速度，GB/s

7.8 7.7

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G3B1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 52
读取速度，GB/s

10.4 10.0
写入速度，GB/s

7.8 7.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 2260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5773CH0-CH9 2GB

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Kingston KVR533D2N4 512MB

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G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Samsung M3 78T5663EH3-CF7 2GB

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Kingston KHYXPX-HYJ 8GB

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A-DATA Technology DDR3 1333G 2GB

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Corsair CMK32GX4M2A2400C14 16GB

Corsair CMK32GX4M2A2400C14 16GB