Samsung M393B1K70QB0-CK0 8GB vs Samsung M386A4G40DM0-CPB 32GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 55

左右 15% 更低的延时
更快的读取速度，GB/s

10.4 9.4

测试中的平均数值
更快的写入速度，GB/s

7.8 7.2

测试中的平均数值

Samsung M386A4G40DM0-CPB 32GB

需要考虑的原因
Samsung M386A4G40DM0-CPB 32GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Samsung M386A4G40DM0-CPB 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 55
读取速度，GB/s

10.4 9.4
写入速度，GB/s

7.8 7.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 2117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M393B2G70BH0-YK0 16GB

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G Skill Intl F4-3600C14-16GVKA 16GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 9905701-008.A00G 16GB

Kingston 9905701-008.A00G 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMU32GX4M4D3000C16 8GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB