Samsung M393B2G70AH0-YH9 16GB vs Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

总分

Samsung M393B2G70AH0-YH9 16GB

Samsung M393B2G70AH0-YH9 16GB

总分

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

差异规格评论

差异

Samsung M393B2G70AH0-YH9 16GB

需要考虑的原因
Samsung M393B2G70AH0-YH9 16GB

报告一个错误

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 55

左右 -77% 更低的延时
更快的读取速度，GB/s

18 9.4

测试中的平均数值
更快的写入速度，GB/s

16.5 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70AH0-YH9 16GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

55 31
读取速度，GB/s

9.4 18.0
写入速度，GB/s

7.8 16.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2424 3729

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M393B2G70AH0-YH9 16GB

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Micron Technology 8ATF1G64HZ-3G2E1 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB