Samsung M393B2G70AH0-YH9 16GB vs UMAX Technology D4-2133-4GB-512X8-L 4GB

总分

Samsung M393B2G70AH0-YH9 16GB

Samsung M393B2G70AH0-YH9 16GB

总分

UMAX Technology D4-2133-4GB-512X8-L 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

差异规格评论

差异

Samsung M393B2G70AH0-YH9 16GB

需要考虑的原因
Samsung M393B2G70AH0-YH9 16GB

报告一个错误

UMAX Technology D4-2133-4GB-512X8-L 4GB

需要考虑的原因
UMAX Technology D4-2133-4GB-512X8-L 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 55

左右 -129% 更低的延时
更快的读取速度，GB/s

16 9.4

测试中的平均数值
更快的写入速度，GB/s

11.5 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70AH0-YH9 16GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

55 24
读取速度，GB/s

9.4 16.0
写入速度，GB/s

7.8 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2424 2432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston 9905598-009.A00G 8GB

Kingston 9905598-009.A00G 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB