Samsung M393B2G70BH0-CH9 16GB vs A-DATA Technology DDR4 3333 2OZ 4GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

A-DATA Technology DDR4 3333 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3333 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 -38% 更低的延时
更快的读取速度，GB/s

15.7 8

测试中的平均数值
更快的写入速度，GB/s

12.3 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

A-DATA Technology DDR4 3333 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 24
读取速度，GB/s

8.0 15.7
写入速度，GB/s

7.3 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2517

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2E3200C16 8GB

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INTENSO M418039 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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A-DATA Technology DDR3 1333G 2GB

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Kllisre DDR4-8GB 8GB

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Mushkin MR[A/B]4U280HHHH8G 8GB

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V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

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Kingston 9905703-011.A00G 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Kingston KVR16N11/8-SP 8GB

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Gloway International Co. Ltd. YCT4S2666D19081C 8GB

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