Micron Technology 16JTF25664AZ-1G4F1 2GB vs Kingston KVR16N11/8-SP 8GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

13.9 13.6

测试中的平均数值
更快的写入速度，GB/s

9.5 8.3

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Kingston KVR16N11/8-SP 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 26
读取速度，GB/s

13.6 13.9
写入速度，GB/s

8.3 9.5
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2035 2432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Samsung M393A1G40DB1-CRC 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology CT4G4DFS8213.M8FB 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston MSI26D4S9S8ME-8 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston 9905678-121.A00G 8GB

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A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB