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Samsung M393B2G70BH0-CH9 16GB
Apacer Technology D22.23263S.002 16GB

Samsung M393B2G70BH0-CH9 16GB vs Apacer Technology D22.23263S.002 16GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
Apacer Technology D22.23263S.002 16GB

Apacer Technology D22.23263S.002 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
Apacer Technology D22.23263S.002 16GB 需要考虑的原因
Apacer Technology D22.23263S.002 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 33
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology D22.23263S.002 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 31
  • 读取速度，GB/s
    8.0 left arrow 16.5
  • 写入速度，GB/s
    7.3 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 3273

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Apacer Technology D22.23263S.002 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology D22.23263S.002 16GB
Apacer Technology D22.23263S.002 16GB
内存RAM
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Samsung M3 78T2863QZS-CF7 1GB
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Corsair CMD32GX4M4A2666C16 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3333C16-16GVK 16GB
G Skill Intl F4-3333C16-16GVK 16GB
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Kingston KHYXPX-HYJ 8GB
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Kingston LV32D4S2S8HD-8 8GB
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Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
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Micron Technology CT8G4DFD8213.16FA2 8GB
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Kingston 99U5474-037.A00LF 4GB
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Micron Technology 16ATF4G64HZ-2G6B2 32GB
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Kingston 99U5471-020.A00LF 4GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
内存RAM
Kingston K1N7HK-HYC 2GB
Kingston K1N7HK-HYC 2GB
G Skill Intl F4-3200C16-8GVR 8GB
G Skill Intl F4-3200C16-8GVR 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Kingston ACR21D4S15HAG/8G 8GB
Kingston ACR21D4S15HAG/8G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-2133C15-8GVK 8GB
G Skill Intl F4-2133C15-8GVK 8GB
内存RAM