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Samsung M393B2G70BH0-CH9 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Samsung M393B2G70BH0-CH9 16GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 34
    左右 3% 更低的延时
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.3 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 34
  • 读取速度，GB/s
    8.0 left arrow 17.3
  • 写入速度，GB/s
    7.3 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 3606

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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