Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology BLS8G4D30AESEK.M8FE 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D30AESEK.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 -22% 更低的延时
更快的读取速度，GB/s

18.6 8

测试中的平均数值
更快的写入速度，GB/s

15.1 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 27
读取速度，GB/s

8.0 18.6
写入速度，GB/s

7.3 15.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 3561

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3600C19-16GSXK 16GB

G Skill Intl F4-3600C19-16GSXK 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ASU21D4U5S8MB-8 8GB

Kingston ASU21D4U5S8MB-8 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB