Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-3200C14-8GVR 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

G Skill Intl F4-3200C14-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 -43% 更低的延时
更快的读取速度，GB/s

20.6 8

测试中的平均数值
更快的写入速度，GB/s

16.2 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3200C14-8GVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 23
读取速度，GB/s

8.0 20.6
写入速度，GB/s

7.3 16.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 3819

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMSX4GX4M1A2400C16 4GB

Corsair CMSX4GX4M1A2400C16 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston 9905599-026.A00G 8GB

Kingston 9905599-026.A00G 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Transcend Information JM2666HSB-16G 16GB

Transcend Information JM2666HSB-16G 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston 9905713-017.A00G 4GB

Kingston 9905713-017.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Crucial Technology CT8G4SFS824A.C8FJ 8GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Transcend Information JM3200HLB-16G 16GB

Transcend Information JM3200HLB-16G 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB