Samsung M393B2G70BH0-CH9 16GB vs Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 48

左右 31% 更低的延时

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

报告一个错误

更快的读取速度，GB/s

16.8 8

测试中的平均数值
更快的写入速度，GB/s

15.7 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 48
读取速度，GB/s

8.0 16.8
写入速度，GB/s

7.3 15.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1911 3047

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSO4GX3M1C1600C11 4GB

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Kingston 9905471-002.A00LF 2GB

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Kingston K1N7HK-ELC 2GB

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Crucial Technology CT4G4DFS8266.C8FF 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Avant Technology J644GU44J2320NQ 32GB

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