Samsung M393B2G70BH0-CH9 16GB vs Kingston KF2666C15S4/8G 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 44

左右 25% 更低的延时

Kingston KF2666C15S4/8G 8GB

需要考虑的原因
Kingston KF2666C15S4/8G 8GB

报告一个错误

更快的读取速度，GB/s

14.2 8

测试中的平均数值
更快的写入速度，GB/s

10.8 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Kingston KF2666C15S4/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 44
读取速度，GB/s

8.0 14.2
写入速度，GB/s

7.3 10.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1911 2425

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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Samsung M3 78T2863QZS-CF7 1GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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SK Hynix MMA82GS6CJR8N-VK 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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A-DATA Technology AO2P21FC4R1-BRFS 4GB