Samsung M393B2G70BH0-CH9 16GB vs Micron Technology TEAMGROUP-UD4-3000 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Micron Technology TEAMGROUP-UD4-3000 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-3000 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 33

左右 -50% 更低的延时
更快的读取速度，GB/s

17 8

测试中的平均数值
更快的写入速度，GB/s

11.9 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 22
读取速度，GB/s

8.0 17.0
写入速度，GB/s

7.3 11.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 3112

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO2P26KC8T1-BPYS 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston 9905469-143.A00LF 4GB

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Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Kingston KHX2933C17S4/8G 8GB

Kingston KHX2933C17S4/8G 8GB

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G Skill Intl F4-2800C15-4GTZB 4GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology BLS4G4D26BFSC.8FB 4GB

Elpida EBJ21EE8BDFA-DJ-F 2GB

Elpida EBJ21EE8BDFA-DJ-F 2GB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB