Samsung M393B2G70BH0-CH9 16GB vs Transcend Information TS512MLH64V1H 4GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Transcend Information TS512MLH64V1H 4GB

需要考虑的原因
Transcend Information TS512MLH64V1H 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 -43% 更低的延时
更快的读取速度，GB/s

16.4 8

测试中的平均数值
更快的写入速度，GB/s

11.7 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Transcend Information TS512MLH64V1H 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 23
读取速度，GB/s

8.0 16.4
写入速度，GB/s

7.3 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2575

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CH9 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Smart Modular SF4641G8CKHI6DFSEG 8GB

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Kingston 9905663-006.A00G 16GB

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Netac Technology Co Ltd EKBLACK4163216AD 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMK64GX4M2A2400C16 32GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3200C15-8GTZSK 8GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB