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Samsung M3 78T2953EZ3-CF7 1GB
Avant Technology J642GU42J7240N4 16GB

Samsung M3 78T2953EZ3-CF7 1GB vs Avant Technology J642GU42J7240N4 16GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
Avant Technology J642GU42J7240N4 16GB 需要考虑的原因
Avant Technology J642GU42J7240N4 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 58
    左右 -132% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Avant Technology J642GU42J7240N4 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 25
  • 读取速度，GB/s
    4,241.0 left arrow 16.4
  • 写入速度，GB/s
    1,950.7 left arrow 12.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2946

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Avant Technology J642GU42J7240N4 16GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
Peak Electronics 256X64M-67E 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C16-16GTZNC 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMV8GX4M1A2133C15 8GB
Corsair CMV8GX4M1A2133C15 8GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.CAGMR.40C0B 8GB
Apacer Technology 78.CAGMR.40C0B 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston ACR32D4S2S8ME-16 16GB
Kingston ACR32D4S2S8ME-16 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
V-Color Technology Inc. TN48G26S819-SB 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905625-075.A00G 16GB
Kingston 9905625-075.A00G 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
内存RAM