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Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
比较
Samsung M393B2G70BH0-CK0 16GB vs A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
总分
Samsung M393B2G70BH0-CK0 16GB
总分
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
需要考虑的原因
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
54
左右 -93% 更低的延时
更快的读取速度,GB/s
15
9.2
测试中的平均数值
更快的写入速度,GB/s
9.5
8.1
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
54
28
读取速度,GB/s
9.2
15.0
写入速度,GB/s
8.1
9.5
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2105
2932
Samsung M393B2G70BH0-CK0 16GB RAM的比较
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMD64GX4M4A2400C14 16GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-4000C19-16GTRG 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3600C16-32GTZN 32GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-4133C19-8GTZR 8GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix MMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK256GX4M8A2400C16 32GB
A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Samsung M3 93T5750CZA-CE6 2GB
Transcend Information TS1GLH64V4B 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT16G4SFRA266.C8FB 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
报告一个错误
×
Bug description
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