Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 54

左右 -157% 更低的延时
更快的读取速度，GB/s

17.9 9.2

测试中的平均数值
更快的写入速度，GB/s

13.7 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 21
读取速度，GB/s

9.2 17.9
写入速度，GB/s

8.1 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP512U64CP8-Y5 1GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB

Crucial Technology CT102464BF160B-16F 8GB

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G Skill Intl F4-4800C18-8GTRG 8GB

Crucial Technology CT51264BA1339.D16F 4GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB