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Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
比较
Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT4G4DFS8213.M8FB 4GB
总分
Samsung M393B2G70BH0-CK0 16GB
总分
Crucial Technology CT4G4DFS8213.M8FB 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
需要考虑的原因
Crucial Technology CT4G4DFS8213.M8FB 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
54
左右 -125% 更低的延时
更快的读取速度,GB/s
15.3
9.2
测试中的平均数值
更快的写入速度,GB/s
10.7
8.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
54
24
读取速度,GB/s
9.2
15.3
写入速度,GB/s
8.1
10.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2105
2353
Samsung M393B2G70BH0-CK0 16GB RAM的比较
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-156.A00LF 2GB
Corsair CMT64GX4M2C3600C18 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK32GX4M2C3200C18 16GB
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-2800C15-16GRKD 16GB
Mushkin 991586 2GB
Kingston K821PJ-MIH 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 9965662-012.A01G 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMR32GX4M2A2666C16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965604-033.D00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MES4S213FF16G28 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-8GVS 8GB
报告一个错误
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Bug description
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