Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT8G4DFS8266.C8FN 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Crucial Technology CT8G4DFS8266.C8FN 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FN 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 54

左右 -64% 更低的延时
更快的读取速度，GB/s

16.4 9.2

测试中的平均数值
更快的写入速度，GB/s

11.3 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 33
读取速度，GB/s

9.2 16.4
写入速度，GB/s

8.1 11.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 2919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Maxsun MSD44G24Q0 4GB

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Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Crucial Technology BLS8G4D240FSB.16FBD2 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Kingston KV0M5R-MIE 8GB

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Panram International Corporation PUD43000C168G2NJR 8GB