Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-2666C15-8GRR 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-2666C15-8GRR 8GB

G Skill Intl F4-2666C15-8GRR 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-2666C15-8GRR 8GB

需要考虑的原因
G Skill Intl F4-2666C15-8GRR 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 54

左右 -54% 更低的延时
更快的读取速度，GB/s

15.8 9.2

测试中的平均数值
更快的写入速度，GB/s

12.2 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2666C15-8GRR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 35
读取速度，GB/s

9.2 15.8
写入速度，GB/s

8.1 12.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 3052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M471A5143EB1-CRC 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology CT32G4SFD832A.M16FB 32GB

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Micron Technology 8ATF51264AZ-2G1A2 4GB

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Asgard VMA45UG-MEC1U2BQ2 8GB

Asgard VMA45UG-MEC1U2BQ2 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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SK Hynix V-GeN D4H4GL26A8TL 4GB

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A-DATA Technology AD5U48008G-B 8GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

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A-DATA Technology AD73I1B1672EG 2GB

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB