Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3333C16-16GTZKW 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-3333C16-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZKW 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 54

左右 -135% 更低的延时
更快的读取速度，GB/s

17.2 9.2

测试中的平均数值
更快的写入速度，GB/s

12.9 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 23
读取速度，GB/s

9.2 17.2
写入速度，GB/s

8.1 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 3227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 9905599-025.A00G 8GB

Kingston 9905599-025.A00G 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Corsair CMX4GX3M1A1600C11 4GB

Corsair CMX4GX3M1A1600C11 4GB

Corsair CMV4GX3M1A1600C11 4GB

Corsair CMV4GX3M1A1600C11 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Kingston KF3000C15D4/8GX 8GB

Kingston KF3000C15D4/8GX 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston MSISID4S9S8ME-8 8GB

Kingston MSISID4S9S8ME-8 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB