Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3600C14-8GVKA 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-3600C14-8GVKA 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GVKA 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 54

左右 -135% 更低的延时
更快的读取速度，GB/s

24.4 9.2

测试中的平均数值
更快的写入速度，GB/s

19.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3600C14-8GVKA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 23
读取速度，GB/s

9.2 24.4
写入速度，GB/s

8.1 19.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 4300

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW64GX4M2D3000C16 32GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Panram International Corporation W4U2666P-8G 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

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Corsair CMG64GX4M2D3600C18 32GB

Kingston 9905702-010.A00G 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-2400C15-4GVR 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB