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Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Samsung M393B2G70BH0-CK0 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 54
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    9.4 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 38
  • 读取速度，GB/s
    9.2 left arrow 9.4
  • 写入速度，GB/s
    8.1 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2110

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston KHX8500D2K2/2GN 1GB
Kingston KHX8500D2K2/2GN 1GB
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内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Transcend Information JM3200HLB-8G 8GB
Transcend Information JM3200HLB-8G 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
Kingston 99U5584-017.A00LF 4GB
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Corsair CMW32GX4M4C3000C15 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
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内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
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Corsair CMSX8GX4M1A2666C18 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
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Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F4-2400C16-8GRS 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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Kingston KHX3000C15D4/4GX 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA451R7MFR8N-TF 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM