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Samsung M393B2G70BH0-CK0 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB

Samsung M393B2G70BH0-CK0 16GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 85
    左右 36% 更低的延时
  • 更快的写入速度，GB/s
    8.1 left arrow 6.0
    测试中的平均数值
InnoDisk Corporation M4S0-4GSSNCIK 4GB 需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCIK 4GB
报告一个错误
  • 更快的读取速度，GB/s
    11.3 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 85
  • 读取速度，GB/s
    9.2 left arrow 11.3
  • 写入速度，GB/s
    8.1 left arrow 6.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 1118

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Micron Technology 36ASF4G72PZ-2G6H1 32GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
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PNY Electronics PNY 2GB
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内存RAM
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内存RAM
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Apacer Technology 78.A1GA0.9L4 2GB
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Samsung M471A5143DB0-CPB 4GB
内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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内存RAM
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Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
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Kingston KHX1600C9S3L/8G 8GB
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Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
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ASint Technology SSA302G08-EGN1C 4GB
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