Samsung M393B2G70BH0-CK0 16GB vs Kingmax Semiconductor GSLG42F-18---------- 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

低于PassMark测试中的延时，ns

54 99

左右 45% 更低的延时
更快的写入速度，GB/s

8.1 6.9

测试中的平均数值

Kingmax Semiconductor GSLG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GSLG42F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

14.2 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 99
读取速度，GB/s

9.2 14.2
写入速度，GB/s

8.1 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 1499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston K6VDX7-MIE 8GB

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Kingston 9905584-016.A00LF 4GB

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Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Crucial Technology CT8G4SFS824A.M8FB 8GB

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Kingston 99U5471-030.A00LF 8GB

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SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB