Samsung M393B2G70BH0-CK0 16GB vs Kingston 9905678-007.A00G 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Kingston 9905678-007.A00G 8GB

Kingston 9905678-007.A00G 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Kingston 9905678-007.A00G 8GB

需要考虑的原因
Kingston 9905678-007.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 54

左右 -135% 更低的延时
更快的读取速度，GB/s

16.6 9.2

测试中的平均数值
更快的写入速度，GB/s

12.2 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Kingston 9905678-007.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 23
读取速度，GB/s

9.2 16.6
写入速度，GB/s

8.1 12.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2922

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Asgard VMA41UF-MEC1U2BQ2 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Panram International Corporation W4N2666PS-16G 16GB

Panram International Corporation W4N2666PS-16G 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB