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Samsung M393B2G70BH0-CK0 16GB
Kingston 9905744-035.A00G 16GB

Samsung M393B2G70BH0-CK0 16GB vs Kingston 9905744-035.A00G 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Kingston 9905744-035.A00G 16GB

Kingston 9905744-035.A00G 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Kingston 9905744-035.A00G 16GB 需要考虑的原因
Kingston 9905744-035.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    53 left arrow 54
    左右 -2% 更低的延时
  • 更快的读取速度，GB/s
    14.6 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905744-035.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 53
  • 读取速度，GB/s
    9.2 left arrow 14.6
  • 写入速度，GB/s
    8.1 left arrow 11.9
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2574

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Kingston 9905744-035.A00G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Kingston 99P5316-014.A00LF 4GB
Kingston 99P5316-014.A00LF 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905744-035.A00G 16GB
Kingston 9905744-035.A00G 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
内存RAM
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston KHX2666C15S4/16G 16GB
Kingston KHX2666C15S4/16G 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
内存RAM
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW64GX4M2E3200C16 32GB
Corsair CMW64GX4M2E3200C16 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Golden Empire CL19-25-25 D4-4000 4GB
Golden Empire CL19-25-25 D4-4000 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM