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Samsung M393B2G70BH0-CK0 16GB
Kingston K821PJ-MID 16GB

Samsung M393B2G70BH0-CK0 16GB vs Kingston K821PJ-MID 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Kingston K821PJ-MID 16GB 需要考虑的原因
Kingston K821PJ-MID 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 54
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    12.7 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Kingston K821PJ-MID 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 41
  • 读取速度，GB/s
    9.2 left arrow 12.7
  • 写入速度，GB/s
    8.1 left arrow 10.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2338

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Kingston K821PJ-MID 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston K821PJ-MID 16GB
Kingston K821PJ-MID 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Kingston 99U5471-002.A01LF 2GB
Kingston 99U5471-002.A01LF 2GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Team Group Inc. Team-Elite-2400 4GB
Team Group Inc. Team-Elite-2400 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F4-3200C16-8GVS 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Golden Empire CL16-18-18 D4-2666 8GB
Golden Empire CL16-18-18 D4-2666 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Good Wealth Technology Ltd. 8GB
Good Wealth Technology Ltd. 8GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM