Samsung M393B2G70BH0-CK0 16GB vs Kingston XG9XKG-MIE 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

低于PassMark测试中的延时，ns

54 55

左右 2% 更低的延时

Kingston XG9XKG-MIE 16GB

需要考虑的原因
Kingston XG9XKG-MIE 16GB

报告一个错误

更快的读取速度，GB/s

17.2 9.2

测试中的平均数值
更快的写入速度，GB/s

14.3 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Kingston XG9XKG-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 55
读取速度，GB/s

9.2 17.2
写入速度，GB/s

8.1 14.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2105 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BL8G32C16U4R.8FE 8GB

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Crucial Technology BLS16G4D26BFSE.16FBD 16GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

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G Skill Intl F4-3200C14-16GTZSW 16GB

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Samsung M393B1K70QB0-CK0 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Transcend Information JM2666HLB-16G 16GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Kingston 9905625-152.A00G 16GB

Kingston 9905625-152.A00G 16GB

Kingston ACR16D3LS1KNG/4G 4GB

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Crucial Technology CT16G4DFRA266.C8FE 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB