Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 54

左右 -42% 更低的延时
更快的读取速度，GB/s

14.2 9.2

测试中的平均数值
更快的写入速度，GB/s

10.3 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 38
读取速度，GB/s

9.2 14.2
写入速度，GB/s

8.1 10.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.BAGNF.40C0B 4GB

Apacer Technology 78.BAGNF.40C0B 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology D22.2221ZA.001 8GB

Apacer Technology D22.2221ZA.001 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Corsair CMW32GX4M4K4000C19 8GB

Corsair CMW32GX4M4K4000C19 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMSX32GX4M1A2666C18 32GB

Corsair CMSX32GX4M1A2666C18 32GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Super Talent F21UB8GS 8GB

Super Talent F21UB8GS 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB